| Material |
Dark
Current |
Speed |
Sensitivity* |
Cost |
| Silicon
(Si) |
Low |
High
Speed |
400 - 1000
nm |
Low |
| Germanium
(Ge) |
High |
Low Speed |
900 - 1600
nm |
Low |
| Gallium Phosphide
(GaP) |
Low |
High
Speed |
150 - 550
nm |
Moderate |
| Indium Gallium Arsenide
(InGaAs) |
Low |
High
Speed |
800 - 1800
nm |
Moderate |
| Extended Range Indium
Gallium Arsenide (InGaAs) |
High |
High
Speed |
1200 - 2600
nm |
High |
| *
代表近似值 |